Patterning method
US10153165B1 · kind B1 · utility
3Cited by
3References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 11, 2018 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Jan 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/42
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention pertains to a patterning method. By taking advantage of the etching loading effect due to different pattern densities in the memory cell region and the peripheral region, the first hard mask is not masked when anisotropically etching the first hard mask within the memory cell region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.