Semiconductor device and method for fabricating the same
US10153210B1 · kind B1 · utility
2Cited by
4References
12Claims
0Family size
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Key dates
| Filing date | Jun 9, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Jun 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a shallow trench isolation (STI) around the first fin-shaped structure; forming a first oxide layer on the first fin-shaped structure; and then forming a second oxide layer on the first oxide layer and the STI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.