Patent · US Active

Crack stop with overlapping vias

US10153232B2 · kind B2 · utility

1Cited by
6References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 26, 2017
Grant dateDec 11, 2018
Priority date
Expiry dateApr 26, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/5226
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A crack stop structure for an integrated circuit (IC) structure is disclosed. The structure can include: a first crack stop pillar laterally separated from a second crack stop pillar within an insulator region of the IC structure. The first crack stop pillar can include an overlapping via in contact with a top surface and at least one side surface of a first conductive element therebelow. The overlapping via of the first crack stop pillar may be in a given layer of the IC structure, and the second crack stop pillar may include a via in the given layer, the via extending to a different depth than the overlapping via. The via of the second crack stop pillar may be an overlapping via in contact with a top surface and at least one side surface of a second conductive element therebelow.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.