Method of operating an IGBT having switchable and non-switchable diode cells

US10153275B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Roman Baburske · Otterfing, DE

Key dates

• Filing date: Feb 27, 2018
• Grant date: Dec 11, 2018
• Expiry date: Feb 27, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/422

Abstract

A method of operating an IGBT is described. The IGBT has gate, emitter and collector terminals, and IGBT cells, switchable diode cells, and non-switchable diode cells integrated in a semiconductor substrate, wherein each of the IGBT cells and switchable diode cells includes an operable switchable channel region. The IGBT is operated in a reverse conductive mode in which the IGBT cells are in a non-conductive mode and the switchable diode cells and the non-switchable diode cells are in a bipolar mode. The IGBT is brought from the reverse conductive mode to a transit mode in which at least some of the non-switchable diode cells are still in the bipolar mode, the IGBT cells are in the non-conductive mode, and the switchable diode cells are in a unipolar mode, by applying a gate voltage having an absolute value larger than a gate threshold voltage to the gate terminal.