Inventor · Otterfing, DE

Roman Baburske

69Patents
4h-index
44Co-inventors
62Inventor score

Filing activity: Sep 30, 2010 → Jun 22, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9105679B2 Semiconductor device and insulated gate bipolar transistor with barrier regions Electricity 11 Active
US9917186B2 Semiconductor device with control structure including buried portions and method of manufacturing Electricity 9 Active
US10332973B2 N-channel bipolar power semiconductor device with p-layer in the drift volume Electricity 8 Active
US9613805B1 Method for forming a semiconductor device Electricity 7 Active
US9373710B2 Insulated gate bipolar transistor Electricity 4 Active
US10153275B2 Method of operating an IGBT having switchable and non-switchable diode cells Electricity 4 Active
US10461739B2 Transistor device Electricity 3 Active
US9876100B2 Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones Electricity 3 Active
US8476712B2 Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode Electricity 3 Active
US9076838B2 Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing Electricity 3 Active
US9536999B2 Semiconductor device with control structure including buried portions and method of manufacturing Electricity 2 Active
US10978560B2 Power semiconductor device with dV/dt controllability and low gate charge Electricity 2 Active
US9997602B2 Semiconductor device with transistor cells and enhancement cells with delayed control signals Electricity 2 Active
US10333387B2 Electric assembly including a semiconductor switching device and a clamping diode Electricity 2 Active
US9231091B2 Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones Electricity 2 Active
US10475909B2 Electric assembly including a bipolar switching device and a wide bandgap transistor Electricity 2 Active
US10651165B2 Semiconductor device having overload current carrying capability Electricity 2 Active
US9419080B2 Semiconductor device with recombination region Electricity 2 Active
US9543389B2 Semiconductor device with recombination region Electricity 1 Active
US9064923B2 Bipolar semiconductor component with a fully depletable channel zone Electricity 1 Active
US10886909B2 Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device Electricity 1 Active
US9515066B2 Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor device Electricity 1 Active
US9641168B2 Controlling reverse conducting IGBT Electricity 1 Active
US10381467B2 Semiconductor device with separation regions Electricity 1 Active
US9985017B2 Semiconductor device comprising a clamping structure Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.