Transistor layout with low aspect ratio
US10153306B2 · kind B2 · utility
7Cited by
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20Claims
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Key dates
| Filing date | Feb 27, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Apr 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.