Maureen R. Brongo
18Patents
9h-index
15Co-inventors
69Inventor score
Filing activity: Sep 9, 1998 → Nov 7, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6187672A | Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing | Electricity | 477 | Expired |
| US6245663A | IC interconnect structures and methods for making same | Electricity | 82 | Expired |
| US6271127A | Method for dual damascene process using electron beam and ion implantation cure methods for low dielectric constant materials | Emerging Cross-Sectional Technologies | 60 | Expired |
| US6627539B1 | Method of forming dual-damascene interconnect structures employing low-k dielectric materials | Electricity | 50 | Expired |
| US6984577B1 | Damascene interconnect structure and fabrication method having air gaps between metal lines and metal layers | Electricity | 26 | Expired |
| US6251796A | Method for fabrication of ceramic tantalum nitride and improved structures based thereon | Chemistry; Metallurgy | 22 | Expired |
| US6709564B1 | Integrated circuit plating using highly-complexed copper plating baths | Electricity | 12 | Expired |
| US6291361A | Method and apparatus for high-resolution in-situ plasma etching of inorganic and metal films | Electricity | 10 | Expired |
| US6383821B1 | Semiconductor device and process | Electricity | 9 | Expired |
| US10153306B2 | Transistor layout with low aspect ratio | Electricity | 7 | Active |
| US6787911B1 | Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing | Electricity | 6 | Expired |
| US7060557B1 | Fabrication of high-density capacitors for mixed signal/RF circuits | Electricity | 5 | Expired |
| US6836400B2 | Structures based on ceramic tantalum nitride | Chemistry; Metallurgy | 5 | Expired |
| US7049246B1 | Method for selective fabrication of high capacitance density areas in a low dielectric constant material | Electricity | 3 | Expired |
| US6798065B2 | Method and apparatus for high-resolution in-situ plasma etching of inorganic and metals films | Electricity | 2 | Expired |
| US6328848A | Apparatus for high-resolution in-situ plasma etching of inorganic and metal films | Electricity | 1 | Expired |
| US10950635B2 | Orthogonal transistor layouts | Electricity | 0 | Active |
| US7109125B1 | Selective fabrication of high capacitance density areas in a low dielectric constant material | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.