LDMOS transistor with lightly-doped annular RESURF periphery
US10153366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2016 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Apr 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and associated methods relate to controlling an electric field profile within a drift region of an LDMOS device using first and second RESURF regions. The first RESURF region extends from a source end toward a drain end of the LDMOS device. The first RESURF region is adjacent to a forms a metallurgical junction with the drift region. The second RESURF layer extends from the drain end toward the source end of the LDMOS device. The second RESURF layer has an end that is longitudinally between the body contact and the source end of the first RESURF layer. A distance between the end of the second RESURF layer and the body contact is greater than a vertical distance between the end of the second RESURF layer and the body contact. A maximum electric field between the second RESURF layer and the body contact can be advantageously reduced with this geometry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.