Inspection of a lithographic mask that is protected by a pellicle
US10156785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2016 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Jul 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.