Method for forming patterns of semiconductor device
US10157744B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 1, 2018 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Feb 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming patterns of semiconductor device is provided in the present invention, with steps of filling up first self-assembly material in first openings in a dielectric layer, phase-separating the first self-assembly material to form a first portion and a second portion surrounding the first portion, removing the first portion and performing a first etch process to form a first mask pattern in a mask layer, forming a second dielectric layer and repeating the above steps to form a second mask pattern in the mask layer, wherein the second mask pattern is aligned with the first mask pattern to form a common mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.