Forming of marking trenches in structure for multiple patterning lithography
US10157796B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to methods including: forming a soft mask; forming a first marking trench within a portion of the soft mask by selectively removing a portion of the soft mask at a first location, over one of a pair of gate trenches; forming an insulative liner on the soft mask and within the first marking trench; forming an anti-reflective film on the insulative liner and within the first marking trench; selectively removing the anti-reflective film and the insulative liner at a second location to expose a portion of the soft mask positioned over the other one of the pair of gate trenches; forming a second marking trench by removing another portion of the soft mask at the second location; and removing a portion of the soft mask at the first and second marking trenches to expose a lower surface of each of the pair of gate trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.