Cross-point memory and methods for fabrication of same

US10157965B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Samuele Sciarrillo · Merate, IT

Key dates

• Filing date: Jan 4, 2017
• Grant date: Dec 18, 2018
• Expiry date: Jan 4, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a memory device of the memory array comprises a substrate and a memory cell stack formed between and electrically connected to first and second conductive lines. The memory cell stack comprises a first memory element over the substrate and a second memory element formed over the first element, wherein one of the first and second memory elements comprises a storage element and the other of the first and second memory elements comprises a selector element. The memory cell stack additionally comprises a first pair of sidewalls opposing each other and a second pair of sidewalls opposing each other and intersecting the first pair of sidewalls. The memory device additionally comprises first protective dielectric insulating materials formed on a lower portion of the first pair of sidewalls and an isolation dielectric formed on the first protective dielectric insulating material and further formed on an upper portion of the first pair of sidewalls.