Charge compensation semiconductor devices

US10157982B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Daniel Tutuc · Finkenstein, AT
• Christian Fachmann · Graz, AT
• Franz Hirler · Isen, DE
• Maximilian Treiber · Munich, DE

Key dates

• Filing date: Aug 22, 2017
• Grant date: Dec 18, 2018
• Expiry date: Aug 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/324
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A field-effect semiconductor device includes a semiconductor body having a first semiconductor region of a first conductivity type, a first side, an edge delimiting the semiconductor body in a direction substantially parallel to the first side, an active area, and a peripheral area arranged between the active area and the edge. A first metallization is arranged on the first side, and a second metallization is arranged opposite the first metallization and in Ohmic connection with the first semiconductor region. In the active area, the semiconductor body further includes: a plurality of drift portions of the first conductivity type alternating with compensation regions of a second conductivity type, the drift portions being in Ohmic connection with the first semiconductor region, the compensation regions being in Ohmic connection with the first metallization and having in a vertical direction perpendicular to the first side a vertical extension.