Semiconductor device and operating method thereof
US10163523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2018 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jan 9, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1202
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.