Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
US10163610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jun 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32715
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.