Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high k at channel

US10163630B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Bo Zheng · Sunnyvale, US
• Avgerinos V. Gelatos · Scotts Valley, US
• Anshul Ashok Vyas · San Ramon, US
• Raymond Hung · Palo Alto, US

Key dates

• Filing date: Aug 11, 2017
• Grant date: Dec 25, 2018
• Expiry date: Aug 11, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67207
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.