Inventor · Palo Alto, CA, US

Raymond Hung

25Patents
10h-index
80Co-inventors
78Inventor score

Filing activity: Feb 2, 1996 → Jul 5, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6054013A Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density Electricity 497 Expired
US6077384A Plasma reactor having an inductive antenna coupling power through a parallel plate electrode Electricity 175 Expired
US6440864B1 Substrate cleaning process Electricity 51 Expired
US6623596B1 Plasma reactor having an inductive antenna coupling power through a parallel plate electrode Electricity 46 Expired
US6238588A High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process Electricity 36 Expired
US6174451A Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons Electricity 36 Expired
US5965035A Self aligned contact etch using difluoromethane and trifluoromethane Electricity 25 Expired
US6524432B1 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density Electricity 24 Expired
US6329292A Integrated self aligned contact etch Electricity 14 Expired
US6027606A Center gas feed apparatus for a high density plasma reactor Emerging Cross-Sectional Technologies 12 Expired
US6613691B1 Highly selective oxide etch process using hexafluorobutadiene Electricity 6 Expired
US6193836A Center gas feed apparatus for a high density plasma reactor Emerging Cross-Sectional Technologies 5 Expired
US9735009B2 Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel Electricity 3 Active
US9960275B1 Method of fabricating air-gap spacer for N7/N5 finFET and beyond Electricity 2 Active
US10475655B2 Selective deposition of metal silicides Electricity 2 Active
US10163630B2 Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high k at channel Electricity 1 Active
US8293460B2 Double exposure patterning with carbonaceous hardmask Physics 1 Active
US11626288B2 Integrated contact silicide with tunable work functions Electricity 0 Active
US10586707B2 Selective deposition of metal silicides Electricity 0 Active
US10615034B2 Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel Electricity 0 Active
US11417568B2 Methods for selective deposition of tungsten atop a dielectric layer for bottom up gapfill Electricity 0 Active
US11355391B2 Method for forming a metal gapfill Electricity 0 Active
US12347695B2 Methods for controlling contact resistance in cobalt-titanium structures Electricity 0 Active
US11424132B2 Methods and apparatus for controlling contact resistance in cobalt-titanium structures Electricity 0 Active
US11037838B2 In-situ integrated chambers Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.