Sinker with a reduced width
US10163678B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2015 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jun 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming a semiconductor structure by forming a plurality of trenches in a semiconductor material, forming a plurality of non-conductive structures in the plurality of trenches, and forming a doped region of the first conductivity type. The plurality of trenches are spaced apart from each other, have substantially equal depths, and include a first trench and a second trench. The plurality of non-conductive structures include a first non-conductive structure in the first trench and a second non-conductive structure in the second trench. The doped region is formed between the first non-conductive structure and the second non-conductive structure. No region of a second conductivity type lies horizontally in between the first non-conductive structure and the second non-conductive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.