Method for permanently bonding wafers by a connecting layer by means of solid state diffusion or phase transformation
US10163681B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Aug 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.