Semiconductor device and method of forming a low profile dual-purpose shield and heat-dissipation structure
US10163744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2011 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jul 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has openings around a center portion of the planar heat spreader and aligned over the peripheral portion of the substrate. A second semiconductor die is mounted over the center portion of the planar heat spreader. A third semiconductor die is mounted over the second semiconductor die. First and second pluralities of bond wires extend from the second and third semiconductor die, respectively, through the openings in the planar heat spreader to electrically connect to the through conductive vias. An encapsulant is deposited over the substrate and around the planar heat spreader.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.