Memory cell with independently-sized elements

US10163978B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Samuele Sciarrillo · Merate, IT
• Marcello Ravasio · Merate, IT

Key dates

• Filing date: Apr 5, 2017
• Grant date: Dec 25, 2018
• Expiry date: Apr 5, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.