Bipolar semiconductor device with multi-trench enhancement regions
US10164078B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Mar 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
There are disclosed herein various implementations of a bipolar semiconductor device with multi-trench enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having an opposite, second conductivity type. The device also includes a first control trench extending through an inversion region having the second conductivity type, and further extending into the drift region, the first control trench being adjacent to cathode diffusions. In addition, the device includes first and second depletion trenches, each having a depletion electrode, the first depletion trench being situated between the second depletion trench and the first control trench. An enhancement region having the first conductivity type is localized in the drift region and extends from the first control trench to the first second depletion trench and further from the first depletion trench to the second depletion trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.