Vertical field effect transistor device having alternating drift regions and compensation regions

US10164086B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Stefan Tegen · Dresden, DE
• Dirk Manger · Dresden, DE

Key dates

• Filing date: Sep 22, 2016
• Grant date: Dec 25, 2018
• Expiry date: Oct 4, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a plurality of drift regions of a vertical field effect transistor arrangement arranged in a semiconductor substrate. The plurality of drift regions has a first conductivity type. The semiconductor device further includes a plurality of compensation regions arranged in the semiconductor substrate. The plurality of compensation regions has a second conductivity type. Each drift region of the plurality of drift regions is arranged adjacent to at least one compensation region of the plurality of compensation regions. The semiconductor device further includes a body region of a transistor structure of the vertical field effect transistor arrangement arranged adjacent to a drift region of the plurality of drift regions. The semiconductor device further includes a gate extending substantially vertically along the body region of the transistor structure for controlling a substantially vertical channel region between a first doping region of the transistor structure and the drift region.