Device with diffusion blocking layer in source/drain region

US10164099B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Shesh Mani Pandey · Saratoga Springs, US
• Pei Zhao · Clifton Park, US
• Baofu Zhu · Clifton Park, US
• Francis Benistant · Singapore, SG

Key dates

• Filing date: Feb 6, 2018
• Grant date: Dec 25, 2018
• Expiry date: Feb 6, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

One illustrative device disclosed herein includes, among other things, a fin defined on a substrate. A gate electrode structure is positioned above the fin in a channel region. A source/drain region is defined in the fin. The source/drain region includes a first epitaxial semiconductor material. The first epitaxial semiconductor material includes a dopant species having a first concentration. A diffusion blocking layer is positioned above the first epitaxial semiconductor material. A second epitaxial semiconductor material is positioned above the diffusion blocking layer. The second epitaxial semiconductor material includes the dopant species having a second concentration greater than the first concentration.