Patent · US Active

P-side layers for short wavelength light emitters

US10164146B2 · kind B2 · utility

0Cited by

4References

14Claims

0Family size

Assignee

Palo Alto Research Center Incorporated · US

Inventors

John E. Northrup · Palo Alto, US
Bowen Cheng · Atherton, US
Christopher L. Chua · San Jose, US
Thomas Wunderer · Palo Alto, US
Noble M. Johnson · Menlo Park, US
Zhihong Yang · San Jose, US

Key dates

Filing date	Jul 13, 2016
Grant date	Dec 25, 2018
Priority date	—
Expiry date	Jan 10, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/04257
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≤xhigh≤0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.