Gadolinium sputtering target and production method of said target
US10167547B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2010 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Mar 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An assembly of a gadolinium target and a titanium backing plate, wherein the gadolinium target-titanium backing plate assembly has a solid-phase diffusion-bonded interface at a bonding interface between the gadolinium target and the titanium backing plate. An object of the present invention is to discover a backing plate that is suitable for the gadolinium sputtering target, explore the optimal bonding conditions, improve the deposition rate, stabilize the sputtering process, and prevent the occurrence of warpage and separation of the target material and the backing plate by increasing the bonding strength between the target material and the backing plate, as well as inhibit the generation of particles during sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.