High temperature silicon oxide atomic layer deposition technology
US10170298B2 · kind B2 · utility
1Cited by
8References
16Claims
0Family size
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Key dates
| Filing date | Nov 7, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Nov 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.