Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
US10170323B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Feb 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation. In some cases, a bilayer approach may be used to deposit the protective coating on sidewalls of partially etched features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.