Mark Wilcoxson
34Patents
9h-index
57Co-inventors
74Inventor score
Filing activity: Nov 15, 1999 → Feb 23, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6341574B1 | Plasma processing systems | Electricity | 61 | Expired |
| US9543148B1 | Mask shrink layer for high aspect ratio dielectric etch | Electricity | 38 | Active |
| US7239737B2 | User interface for quantifying wafer non-uniformities and graphically explore significance | Electricity | 30 | Expired |
| US6744213B2 | Antenna for producing uniform process rates | Electricity | 24 | Expired |
| US7294580B2 | Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition | Electricity | 22 | Expired |
| US9620377B2 | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch | Electricity | 22 | Active |
| US10170323B2 | Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch | Electricity | 11 | Active |
| US9673058B1 | Method for etching features in dielectric layers | Electricity | 10 | Active |
| US6518705B2 | Method and apparatus for producing uniform process rates | Electricity | 9 | Expired |
| US8317934B2 | Multi-stage substrate cleaning method and apparatus | Electricity | 9 | Active |
| US6842147B2 | Method and apparatus for producing uniform processing rates | Electricity | 8 | Expired |
| US10431458B2 | Mask shrink layer for high aspect ratio dielectric etch | Electricity | 8 | Active |
| US7632376B1 | Method and apparatus for atomic layer deposition (ALD) in a proximity system | Electricity | 7 | Active |
| US7329321B2 | Enhanced wafer cleaning method | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7022611B1 | Plasma in-situ treatment of chemically amplified resist | Electricity | 5 | Expired |
| US8757177B2 | Multi-stage substrate cleaning method and apparatus | Electricity | 5 | Active |
| US6873112B2 | Method for producing a semiconductor device | Electricity | 4 | Expired |
| US7347915B1 | Plasma in-situ treatment of chemically amplified resist | Electricity | 4 | Expired |
| US8127395B2 | Apparatus for isolated bevel edge clean and method for using the same | Emerging Cross-Sectional Technologies | 4 | Active |
| US8440573B2 | Method and apparatus for pattern collapse free wet processing of semiconductor devices | Electricity | 4 | Active |
| US8021512B2 | Method of preventing premature drying | Electricity | 4 | Active |
| US9159593B2 | Method of particle contaminant removal | Chemistry; Metallurgy | 3 | Active |
| US7597765B2 | Post etch wafer surface cleaning with liquid meniscus | Emerging Cross-Sectional Technologies | 3 | Active |
| US7758404B1 | Apparatus for cleaning edge of substrate and method for using the same | Performing Operations; Transporting | 3 | Active |
| US7946303B2 | Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus | Emerging Cross-Sectional Technologies | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.