Implant after through-silicon via (TSV) etch to getter mobile ions

US10170337B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Christopher N. Collins · Poughkeepsie, US
• Mukta G. Farooq · Hopewell Junction, US
• Troy L. Graves-Abe · Wappingers Falls, US
• Brian J. Greene · Wappingers Falls, US
• Robert Hannon · Land O' Lakes, US
• Herbert L. Ho · New Windsor, US
• Chandrasekharan Kothandaraman · New York, US

Key dates

• Filing date: Jan 13, 2016
• Grant date: Jan 1, 2019
• Expiry date: May 14, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26586
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of making a semiconductor device includes disposing a mask on a substrate; etching the mask to form an opening in the mask; etching a trench in the substrate beneath the opening in the mask; and implanting a dopant in an area of the substrate beneath the opening of the mask, the dopant capable of gettering mobile ions that can contaminate the substrate; wherein the dopant extends through the substrate from a sidewall of the trench and an endwall of the trench.