Three-dimensional stacked junctionless channels for dense SRAM

US10170485B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michael A. Guillorn · Locke, US
• Robert R. Robison · Colchester, US
• Reinaldo Vega · Mahopac, US
• Rajasekhar Venigalla · Hopewell Junction, US

Key dates

• Filing date: Jun 18, 2018
• Grant date: Jan 1, 2019
• Expiry date: Jun 18, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/011

Abstract

A structure comprises a first channel region forming an n-channel device; a second channel region forming a p-channel device, the p-channel device being stacked with the n-channel device in a vertical orientation; a gate positioned around the stacked n-channel device and p-channel device; and at least one source region and at least one drain region extending from each of the n-channel device and the p-channel device. Each of the at least one source region and the at least one drain region within the stacked n-channel device and p-channel device are independently contacted.