Inventor · Hopewell Junction, NY, US

Rajasekhar Venigalla

82Patents

11h-index

70Co-inventors

77Inventor score

Filing activity: Sep 14, 2004 → Aug 7, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9437503B1	Vertical FETs with variable bottom spacer recess	Electricity	60	Active
US9530700B1	Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess etch	Electricity	49	Active
US9431305B1	Vertical transistor fabrication and devices	Electricity	45	Active
US7056192B2	Ceria-based polish processes, and ceria-based slurries	Electricity	39	Expired
US8415250B2	Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device	Electricity	34	Active
US9859421B1	Vertical field effect transistor with subway etch replacement metal gate	Electricity	23	Active
US8643122B2	Silicide contacts having different shapes on regions of a semiconductor device	Electricity	19	Active
US9728466B1	Vertical field effect transistors with metallic source/drain regions	Electricity	18	Active
US9721848B1	Cutting fins and gates in CMOS devices	Electricity	17	Active
US10083961B2	Gate cut with integrated etch stop layer	Electricity	11	Active
US9761727B2	Vertical FETs with variable bottom spacer recess	Electricity	11	Active
US10096607B1	Three-dimensional stacked junctionless channels for dense SRAM	Electricity	10	Active
US9601491B1	Vertical field effect transistors having epitaxial fin channel with spacers below gate structure	Electricity	9	Active
US10170584B2	Nanosheet field effect transistors with partial inside spacers	Electricity	9	Active
US9293551B2	Integrated multiple gate length semiconductor device including self-aligned contacts	Electricity	8	Active
US9978750B1	Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices	Electricity	7	Active
US8420491B2	Structure and method for replacement metal gate field effect transistors	Electricity	7	Active
US9911804B1	Vertical fin field effect transistor with air gap spacers	Electricity	5	Active
US11121317B2	Low resistance crosspoint architecture	Electricity	5	Active
US10283416B2	Vertical FETS with variable bottom spacer recess	Electricity	4	Active
US10109535B2	Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess ETCH	Electricity	4	Active
US10170485B2	Three-dimensional stacked junctionless channels for dense SRAM	Electricity	4	Active
US10164119B2	Vertical field effect transistors with protective fin liner during bottom spacer recess etch	Electricity	3	Active
US8557649B2	Method for controlling structure height	Electricity	3	Active
US9941411B2	Vertical transistor fabrication and devices	Electricity	2	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.