Magnetoresistive element and memory device
US10170519B2 · kind B2 · utility
8Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2016 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Oct 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetoresistive element includes a first metal layer having a body-centered cubic structure, a second metal layer having a hexagonal close-packed structure on the first metal layer, a metal nitride layer on the second metal layer, a first magnetic layer on the metal nitride layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.