Stable work function for narrow-pitch devices
US10170576B2 · kind B2 · utility
6Cited by
6References
14Claims
0Family size
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Key dates
| Filing date | Nov 15, 2017 |
| Grant date | Jan 1, 2019 |
| Priority date | — |
| Expiry date | Nov 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.