Patent · US Active

Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor

US10170621B2 · kind B2 · utility

2Cited by

0References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Shay Reboh · Grenoble, FR
Perrine Batude · Dijon, FR
Flavia PIEGAS LUCE · Grenoble, FR

Key dates

Filing date	May 23, 2017
Grant date	Jan 1, 2019
Priority date	—
Expiry date	Jun 10, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/259
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method of making a transistor, comprising the following steps:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.