Manufacturing method for a semiconductor device, pattern generating method and nontransitory computer readable medium storing a pattern generating program
US10176290B2 · kind B2 · utility
0Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2016 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Jan 14, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2111/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, stepped structure is formed on a semiconductor substrate, a processing film is formed to cover the stepped structure, a resist film is formed on the processing film in such a manner as to be thinner at a higher portion of the stepped structure than at a lower portion of the same, and the resist film and the processing film are etched to flatten the processing film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.