Tungsten sputtering target and method for producing same
US10176974B2 · kind B2 · utility
0Cited by
10References
4Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 28, 2015 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Sep 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/285
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sputtering target containing 0.01 to 0.5 wt % of Ag, and remainder being W and unavoidable impurities. The object of the present invention is to provide a sputtering target capable of forming a film having a relatively low specific resistance by sputtering, wherein the obtained film is endowed with good uniformity, and in particular the sputtering target has superior characteristics upon forming thin films for semiconductor devices, as well as to provide a method for producing the foregoing sputtering target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.