Silicon wafer and method for manufacturing the same
US10177008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2014 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Jan 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This method for manufacturing a silicon wafer includes: a first heat treatment step of performing RTP treatment on the silicon wafer in an oxidizing atmosphere; a step of removing a region in the silicon wafer in which an oxygen concentration increases in the first heat treatment step; a second heat treatment step of performing, after performing this removing step, RTP treatment on the silicon wafer in a nitriding atmosphere or an Ar atmosphere; and a step of removing, after performing the second heat treatment step, a region in the silicon wafer in which an oxygen concentration decreases in the second heat treatment step. This method enables the manufacture of a silicon wafer in which latent defects such as OSF nuclei and oxygen precipitate nuclei existing in a PV region are destroyed or reduced, and that has a gettering site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.