Method for conditioning a processing chamber for steady etching rate control
US10177017B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 5, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Jul 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide methods for conditioning a plasma processing chamber to maintain a reliable and predicable processing conditions while performing a oxide removal process on a substrate. In one embodiment, a method for conditioning a plasma processing chamber includes supplying a first gas mixture including an inert gas into a processing chamber a first period of time in absent of a substrate, supplying a second gas mixture including an inert gas, a hydrogen containing gas and a halogen containing gas for a second period of time in absent of the substrate, and supplying a third gas mixture including an inert gas and a hydrogen containing gas for a third period of time in absent of the substrate in the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.