Chun Yan
28Patents
12h-index
69Co-inventors
84Inventor score
Filing activity: Dec 8, 1997 → Mar 30, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6352049B1 | Plasma assisted processing chamber with separate control of species density | Electricity | 419 | Expired |
| US6080529A | Method of etching patterned layers useful as masking during subsequent etching or for damascene structures | Electricity | 403 | Expired |
| US6547977B1 | Method for etching low k dielectrics | Electricity | 291 | Expired |
| US9114438B2 | Copper residue chamber clean | Electricity | 183 | Active |
| US6331380A | Method of pattern etching a low K dielectric layer | Electricity | 92 | Expired |
| US6458516B1 | Method of etching dielectric layers using a removable hardmask | Electricity | 65 | Expired |
| US6296780A | System and method for etching organic anti-reflective coating from a substrate | Electricity | 22 | Expired |
| US7374636B2 | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor | Electricity | 14 | Expired |
| US6620289B1 | Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system | Electricity | 14 | Expired |
| US7320942B2 | Method for removal of metallic residue after plasma etching of a metal layer | Emerging Cross-Sectional Technologies | 13 | Expired |
| US8871107B2 | Subtractive plasma etching of a blanket layer of metal or metal alloy | Electricity | 13 | Active |
| US6537918B2 | Method for etching silicon oxynitride and dielectric antireflection coatings | Electricity | 13 | Expired |
| US6291356A | Method for etching silicon oxynitride and dielectric antireflection coatings | Electricity | 12 | Expired |
| US7442114B2 | Methods for silicon electrode assembly etch rate and etch uniformity recovery | Electricity | 9 | Expired |
| US6933239B2 | Method for removing conductive residue | Electricity | 8 | Expired |
| US6649532B1 | Methods for etching an organic anti-reflective coating | Electricity | 7 | Expired |
| US10090147B2 | Integrated system and method for source/drain engineering | Electricity | 6 | Active |
| US7316199B2 | Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber | Electricity | 6 | Expired |
| US9484220B2 | Sputter etch processing for heavy metal patterning in integrated circuits | Electricity | 4 | Active |
| US11043393B2 | Ozone treatment for selective silicon nitride etch over silicon | Electricity | 4 | Active |
| US10177017B1 | Method for conditioning a processing chamber for steady etching rate control | Electricity | 2 | Active |
| US11276560B2 | Spacer etching process | Electricity | 1 | Active |
| US11387115B2 | Silicon mandrel etch after native oxide punch-through | Electricity | 1 | Active |
| US11649559B2 | Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate | Electricity | 0 | Active |
| US11651977B2 | Processing of workpieces using fluorocarbon plasma | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.