Integration of air gaps with back-end-of-line structures
US10177029B1 · kind B1 · utility
3Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2017 |
| Grant date | Jan 8, 2019 |
| Priority date | — |
| Expiry date | Oct 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect structures and methods for forming an interconnect structure. A sacrificial layer is formed on a substrate and an interconnect opening is formed that extends vertically through the sacrificial layer into the substrate. The interconnect opening is filled with a conductor to form a conductive feature. After filling the interconnect opening with the conductor, a dielectric layer is formed on the sacrificial layer. After the dielectric layer is formed on the sacrificial layer, the sacrificial layer is removed to form an air gap layer arranged vertically between the dielectric layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.