Method for fabricating junctions and spacers for horizontal gate all around devices

US10177227B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Naomi Yoshida · Sunnyvale, US
• Lin Dong · Sunnyvale, US
• Shiyu Sun · Shanghai, CN
• Myungsun Kim · Hwaseong-si, KR
• Nam Sung Kim · Hopewell Junction, US
• Dimitri Kioussis · San Jose, US
• Mikhail Korolik · San Jose, US
• Gaetano Santoro · Zaventem, BE
• Vanessa Pena · Leuven, BE

Key dates

• Filing date: Aug 28, 2017
• Grant date: Jan 8, 2019
• Expiry date: Aug 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.