Semiconductor device including at least one type of deep-level dopant

US10177230B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stephan Voss · Munich, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Jun 4, 2015
• Grant date: Jan 8, 2019
• Expiry date: Dec 12, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834

Abstract

A semiconductor device includes a first semiconductor region including a first semiconductor material and a second semiconductor region adjoining the first semiconductor region, the second semiconductor region including a second semiconductor material different from the first semiconductor material. The semiconductor device further includes at least one of a drift zone and a base zone in the first semiconductor region, and at least one type of deep-level dopant in an emitter region of the second semiconductor region. The at least one type of deep-level dopant has a distance to the valence or conduction band of at least 100 meV.