Semiconductor image sensor device having back side illuminated image sensors with embedded color filters

US10181491B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chiu-Jung Chen · Tainan, TW
• Chun-Hao Chou · Tainan, TW
• Hsin-Chi Chen · Tainan, TW
• Kuo-Cheng Lee · Tainan, TW
• Volume Chien · Siaying, TW
• Yung-Lung Hsu · Tainan, TW
• Yun-Wei Cheng · Taipei, TW

Key dates

• Filing date: Oct 9, 2017
• Grant date: Jan 15, 2019
• Expiry date: Oct 9, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/48463

Abstract

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.