Epitaxy reactor and susceptor system for improved epitaxial wafer flatness
US10184193B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 18, 2016 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Jan 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68735
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A susceptor supports a semiconductor wafer and includes a substantially cylindrical body comprising an outer rim having an upper surface. The body also includes a recess extending into the body from the upper surface to a recess floor such that the recess is sized and shaped for receiving the wafer therein. The body further includes a ledge extending between the rim and the recess floor. The ledge includes a ramp comprising a first surface, a second surface, and a third surface. The first surface is oriented at a first angle with respect to the upper surface; the second surface is oriented at a second angle oriented with respect to the upper surface; and the third surface is oriented at a third angle with respect to the upper surface. Further, the second angle is greater than the first angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.