Patent · US Active

Semiconductor device including a passive component formed in a redistribution layer

US10186481B2 · kind B2 · utility

1Cited by

6References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Maciej Wojnowski · Munich, DE
Frank Daeche · Unterhaching, DE
Zeeshan Umar · Munich, DE

Key dates

Filing date	Mar 15, 2017
Grant date	Jan 22, 2019
Priority date	—
Expiry date	Apr 11, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH02M3/158
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A device includes a semiconductor chip, a plurality of planar metallization layers arranged over a main surface of the semiconductor chip, and a passive component including windings, wherein each of the windings is formed in one of the plurality of planar metallization layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.