Patent · US Active

Metal on both sides with clock gated-power and signal routing underneath

US10186484B2 · kind B2 · utility

3Cited by
1References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 27, 2014
Grant dateJan 22, 2019
Priority date
Expiry dateDec 26, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/60
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method including forming a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein the plurality of second interconnects include interconnects of different dimensions; and forming contact points to the second plurality of interconnects, the contact points operable for connection to an external source. An apparatus including a substrate including a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein the plurality of second interconnects include interconnects of different dimensions; and contact points coupled to the second plurality of interconnects, the contact points operable for connection to an external source.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.