Etch chemistries for metallization in electronic devices
US10186530B2 · kind B2 · utility
1Cited by
1References
36Claims
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Key dates
| Filing date | Aug 29, 2016 |
| Grant date | Jan 22, 2019 |
| Priority date | — |
| Expiry date | Aug 29, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.