Patent · US Active

Patterning for substrate fabrication

US10186542B1 · kind B1 · utility

2Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 18, 2017
Grant dateJan 22, 2019
Priority date
Expiry dateJul 20, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/38
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Various examples of a technique for forming a pattern for substrate fabrication are disclosed herein. In an example, a method includes receiving a substrate. A patterned resist is formed on the substrate and has a trench defined therein. A dielectric is deposited on the patterned resist and within the trench such that the dielectric narrows a width of the trench to further define the trench. A fabrication process is performed on a region of the substrate underlying the trench defined by the dielectric.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.