Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ)

US10186551B1 · kind B1 · utility

Assignee

• Spin Transfer Technologies, Inc. · US

Inventors

• Kuk-Hwan Kim · Milpitas, US
• Dafna Beery · Palo Alto, US
• Gian Sharma · Fremont, US
• Amitay Levi · Cupertino, US
• Andrew J. Walker · Mountain View, US

Key dates

• Filing date: Jan 8, 2018
• Grant date: Jan 22, 2019
• Expiry date: Jan 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

In one embodiment, an apparatus includes lower electrodes positioned below a surface of a substrate, the substrate including crystalline Si, a plurality of strap regions positioned above the lower electrodes and below sets of pillars of Si, the pillars rising above the substrate, the sets of pillars being aligned in a first direction along a plane perpendicular to a film thickness direction, and the strap regions extending above a surface of the substrate, silicide junctions positioned between each of the strap regions and a corresponding lower electrode positioned therebelow, upper electrodes positioned above each of the pillars, gate dielectric layers positioned on sides of the pillars to a height greater than a lower edge of the upper electrodes, and gate layers positioned on sides of the gate dielectric layers in a second direction along the plane and perpendicular to the first direction that transverse a plurality of sets of pillars.